IKP20N60H3 Datasheet, PDF (5/16 Pages) Infineon Technologies AG – High speed IGBT in Trench and Fieldstop technology

IKP20N60H3
Highspeedswitchingseriesthirdgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
IGES
Transconductance
gfs
VGE=0V,IC=2.00mA
VGE=15.0V,IC=20.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
VGE=0V,IF=10.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.29mA,VCE=VGE
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=20.0A
Value
Unit
min. typ. max.
600 -
-V
-
-
1.95 2.40
2.30 -
V
- 2.50 -
-
-
1.65 2.05
1.67 -
V
- 1.65 -
4.1 5.1 5.7 V
-
- 40.0 µA
-
- 1500.0
-
- 100 nA
- 10.9 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from LE
case
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=20.0A,
VGE=15V
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=150°C
Value
Unit
min. typ. max.
- 1100 -
-
70
- pF
-
32
-
- 120.0 - nC
- 7.0 - nH
-
-A
120
5
Rev.2.2,2014-03-12