IKP20N60H3 Datasheet, PDF (12/16 Pages) Infineon Technologies AG – High speed IGBT in Trench and Fieldstop technology

IKP20N60H3
Highspeedswitchingseriesthirdgeneration
1
1
D=0.5
D=0.5
0.2
0.2
0.1
0.1
0.1
0.05
0.05
0.02
0.1
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
0.001
1E-6
i:
1
2
3
4
ri[K/W]: 0.07041042 0.3070851 0.3198984 0.1871538
τi[s]: 9.6E-5
6.8E-4
0.01084623 0.06925485
1E-5 1E-4 0.001 0.01 0.1
1
tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedance
(D=tp/T)
0.001
1E-7
1E-6
i:
1
2
3
4
ri[K/W]: 0.4398 0.6662 0.4734 0.3169
τi[s]: 1.3E-4 1.1E-3 7.1E-3 0.04629
1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s]
Figure 22. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
250
Tj=25°C, IF = 20A
Tj=175°C, IF = 20A
200
1.00
0.75
Tj=25°C, IF = 20A
Tj=175°C, IF = 20A
150
0.50
100
0.25
50
600
800
1000 1200 1400 1600
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
0.00
800 900 1000 1100 1200 1300 1400 1500 1600
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 24. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
12
Rev.2.2,2014-03-12