BFQ790 Datasheet, PDF (9/30 Pages) Infineon Technologies AG – High Linearity High Gain 1/2 Watt RF Driver Amplifier

3
Absolute Maximum Ratings
BFQ790
Absolute Maximum Ratings
Table 3-1 Absolute Maximum Ratings at T_A = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Max.
Collector emitter voltage
V_CE
6.1
V
T_A = 25 °C
5.1
T_A = -40 °C
Collector base voltage
V_CB
18
Instantaneous total base emitter
v_BE
-2.0
reverse voltage
V
V
DC + RF swing
Instantaneous total collector current i_C
–
DC collector current
I_C
–
DC base current
I_B
–
RF input power
P_RFin
–
Mismatch at output
VSWR –
600
mA
DC + RF swing
300
mA
10
mA
18
dBm In- and output matched
10:1
In compression, over all
phase angles
ESD stress pulse
V_ESD
-500
500
V
HBM, all pins, acc. to
ANSI / ESDA /
JEDEC JS-001-2012
Dissipated power
P_diss
–
1500
mW
T_S ≤ 97.5 °C¹⁾, regard
derating curve in figure
5-1
Junction temperature
T_J
–
150
°C
Operating case temperature
T_A
-40
105²⁾
°C
Storage temperature
T_Stg
-55
150
°C
1) T_S is the soldering point temperature. T_S is measured on the emitter lead at the soldering point of the pcb.
2) At the same time regard T_J,max.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Preliminary Data Sheet
9
Revision 2.0, 2014-08-26