BFQ790 Datasheet, PDF (18/30 Pages) Infineon Technologies AG – High Linearity High Gain 1/2 Watt RF Driver Amplifier

BFQ790
Electrical Performance in Test Fixture
24
22
20
18
16
14
12
10
8
6
10¹
10²
10³
10⁴
10⁵
10⁶
R_BE[Ohm]
Figure 7-4 Collector Emitter Breakdown Voltage BV_CER vs. Resistor R_B/GND
Note: The above figure shows the collector-emitter breakdown voltage BVCER with a resistor R_B/GND between
base and emitter. Only for very high R_B/GND values ("open base") the breakdown voltage is as low as
BVCEO (here 6.7 V). With decreasing R_B/GND values BVCER increases, e.g. at R_B/GND=10 kOhm to
BVCER=10 V. In the application the biasing base resistance together with block capacitors take over the
function of R_B/GND and allows the RF voltage amplitude to swing up to voltages much higher than BVCEO,
no clipping occurs. Due to this effect the transistor can be biased at VCE=5 V and still high RF output powers
achieved, see the OP1dB values reported in chapter 7.2.
Preliminary Data Sheet
18
Revision 2.0, 2014-08-26