BFQ790 Datasheet, PDF (8/30 Pages) Infineon Technologies AG – High Linearity High Gain 1/2 Watt RF Driver Amplifier

2
Features
• High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA
in 1850 MHz and 2650 MHz Class A application circuits
• High compression point OP1dB of 27 dBm @ 5 V, 250 mA
corresponding to 40% collector efficiency
• High power gain of 17 dB @ 5V, 250 mA in 1850 MHz Class A
application circuit
• Low minimum noise figure of 2.6 dB @ 1800 MHz, 5 V, 70 mA
• Single stage, intended for external matching
• Exceptional ruggedness up to VSWR 10:1 at output
• High maximum RF input power PRFinmax of 18 dBm
• Safe operation with single 5 V supply
• 100% test of proper die attach for reproducible thermal contact
• 100% DC and RF tested
• Easy to use large signal compact (VBIC) model available
• Cost effective NPN SiGe technology running in very high volume
• Easy to use Pb-free (RoHS compliant) and halogen-free industry
standard package SOT89, low RTHJS of 35 K/W
BFQ790
Features
1
2
3
2
Applications
As
• High linearity driver or pre-driver in the transmit chain
• 2nd or 3rd stage LNA in the receive chain
• IF or LO buffer amplifier
In
• Commercial / industrial wireless infrastructure / basestations
• Repeaters
• Automated test equipment
For
• Cellular, PCS, DCS, UMTS, LTE, CDMA, WCDMA, GSM, GPRS
• WLAN, WiMAX, WLL and MMDS
• ISM, AMR
• UHF television, CATV, DBS
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFQ790
Package
SOT89
1=B
Pin Configuration
2=E
3=C
Marking
R3
Preliminary Data Sheet
8
Revision 2.0, 2014-08-26