BFQ790 Datasheet, PDF (13/30 Pages) Infineon Technologies AG – High Linearity High Gain 1/2 Watt RF Driver Amplifier

BFQ790
Electrical Performance in Test Fixture
7
Electrical Performance in Test Fixture
7.1
DC Parameter Table
Table 7-1 DC Characteristics at T_A = 25 °C
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Typ. Max.
Collector emitter breakdown voltage
Collector emitter leakage current
V_(BR)CEO 6.1
I_CES
–
6.7 –
V
I_C = 1 mA, open base
1
40¹⁾
nA
V_CE = 8 V, V_BE = 0
0.1 3
µA V_CE = 18 V, V_BE = 0
E-B short circuited
Collector base leakage current
I_CBO
–
1
40¹⁾
nA
V_CB = 8 V, I_E = 0
Open emitter
Emitter base leakage current
I_EBO
–
1
40¹⁾
nA
V_EB = 0.5 V, I_C = 0
Open collector
DC current gain
h_FE
60
120 180
V_CE = 5 V, I_C = 250 mA
Pulse measured²⁾
1) Upper spec value limited by the cycle time of the 100% test.
2) Pulse width is 1 ms, duty cycle 10%. Regard that the current gain h_FE depends on the junction temperature T_J and T_J
amongst others from the thermal resistance R_THSA of the pcb, see notes to table 4-1. Hence the h_FE specified in this
datasheet must not be the same as in the application. It is highly recommended to apply circuit design techniques to make
the collector current I_C independent on the h_FE production variation and temperature effects.
Preliminary Data Sheet
13
Revision 2.0, 2014-08-26