TLE7182EM Datasheet, PDF (8/28 Pages) Infineon Technologies AG – H-Bridge and Dual Half Bridge Driver IC

H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
General Product Characteristics
Absolute Maximum Ratings (cont’d)¹⁾
40 °C ≤ T_j ≤ 150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values Unit Conditions
Min.
Max.
4.1.29 CDM
V_CDM
–
1
kV
1) Not subject to production test, specified by design.
2) Reflow profile IPC/JEDEC J-STD-020C
3) ESD susceptibility HBM according to EIA/JESD 22-A 114B
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
4.2
Functional Range
Pos. Parameter
4.2.1
4.2.2
Specified supply voltage range
supply voltage range¹⁾
Symbol
V_VS1
V_VS2
Limit Values
Min.
Max.
7.0
34
5.5
45
4.2.3 Quiescent current at VS
I_QVS1
–
8
4.2.4 Quiescent current at VS
I_QVS2
–
10
4.2.5 Quiescent current at VDH
I_QVDH1
–
8
4.2.6 Quiescent current at VDH
I_QVDH2
–
10
4.2.7 Supply current at Vs (device
I_Vs(1)
–
22
enabled)²⁾
4.2.8 Supply current at Vs (device
I_Vs(2)
–
45
enabled)
4.2.9 D.C. switch on time of output
D_DC
–
∞
stages
4.2.10 Duty cycle Highside output stage³⁾ D_HS
0
95
Unit
V
V
µA
µA
µA
µA
mA
mA
s
%
4.2.11 Duty cycle Lowside output stage D_LS
0
100
%
1) operation above 34V limited by max. allowed power dissipation and max. ratings
2) Current can be higher, if driver output stages are unsupplied
3) max. limit of D.C. will increase, if f_PWM or external gate charge of the MOSFETs is reduced
Conditions
–
V_VS<7V reduced
functionality
V_VS,V_VDH=12V;
ENA=Low; T_j=25°C
V_VS,V_VDH<15V;
ENA=Low; T_j≤85°C
V_VS,V_VDH=12V;
ENA=Low; T_j=25°C
V_VS,V_VDH<15V;
ENA=Low; T_j≤85°C
no switching
4xQ_GSxf_PWM≤20mA
; V_VS=7.0..34V
–
f_PWM=20kHz;
continuous
operation;
C_BS ≥330nF
–
The PWM frequency is limited by thermal constraints and the maximum duty cycle (minimum charging time of
bootstrap capacitor).
Data Sheet
8
Rev 1.1, 2010-09-30