TLE7182EM Datasheet, PDF (11/28 Pages) Infineon Technologies AG – H-Bridge and Dual Half Bridge Driver IC

H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Description and Electrical Characteristics
____
ERR
IH2
IH1
IL2
IL1
VS
ENA
VREG
Voltage regulator
VDH
Charge pump
BHx
RPP
Error logic
Reset
Power On Reset
loc k /
unloc k
VREG
VDH
S CD
Input Logic
Shoot Through
Protection
Dead Time
ON / OFF
ON / OFF
short circuit filter
blanking
SCD
SCD
Short Circuit
Detection Level
Level
shifter
Level
shifter
SCDL
+
-
V_{S CP}
Floating HS driver 2x
VREG
GHx
SHx
+
-
V_{S CP}
Floating LS driver 2x
GLx
SL
GND
Figure 3 Block Diagram of Driver Stages including Short Circuit Detection
5.1.3 Dead Time and Shoot Through Protection
In bridge applications it has to be assured that the external high side and low side MOSFETs are not “on” at the
same time, connecting directly the battery voltage to GND.
In TLE7182EM a minimum dead time applied. It is fixed internally and can not be programmed.
If an exact dead time of the bridge is needed, the use of the µC PWM generation unit is recommended.
In addition to this dead time, the TLE7182EM provides a locking mechanism, avoiding that both external
MOSFETs of one half bridge can be switched on at the same time. This functionality is called shoot through
protection. If the command to switch on both high and low side switches in the same half bridge is given at the
input pins, the command will be ignored. The outputs will stay in the situation like before the conflicting input.
The Shoot through protection and the dead time of the TLE7182EM will be deactivated, if a voltage of 5V is applied
at pin SCDL. The deactivation of the shoot through protection is necessary to drive valves or solenoids which are
designed in between the Lowside and Highside MOSFET of one half bridge or 4 separate low side MOSFETs.
For more detailed information how to drive valves or solenoid in between one half bridge please see Figure 7.
5.1.4 Bootstrap Principle
The TLE7182EM provides a bootstrap based supply for its high side output stages.
The bootstrap capacitors are charged by switching on the external low side MOSFETs, connecting the bootstrap
capacitor to GND. Under this condition the bootstrap capacitor will be charged from the VREG capacitor via the
integrated bootstrap diode. If the low side MOSFET is switched off and the high side MOSFET is switched on, the
bootstrap capacitor will float together with the SHx voltage to the supply voltage of the bridge. Under this condition
the supply current of the high side output stage will discharge the bootstrap capacitor. This current is specified.
Data Sheet
11
Rev 1.1, 2010-09-30