TLE7182EM Datasheet, PDF (12/28 Pages) Infineon Technologies AG – H-Bridge and Dual Half Bridge Driver IC

H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Description and Electrical Characteristics
The size of the capacitor together with this current will determine how long the high side MOSFET can be kept on
without recharging the bootstrap capacitor.
5.1.5 100% D.C. charge pumps
100% D.C. charge pumps are implemented for each high side output stage. Therefore the high side output stages
can be switch on for an unlimited time. These integrated charge pumps can handle leakage currents which will be
caused by external MOSFETs and the TLE7182EM itself. They are not strong enough to drive a 99% duty cycle
for a longer time. the charge pumps are running when the driver is not in sleep mode and assure that the bootstrap
capacitors are charged as long as the user does not apply critical duty cycle for a longer time.
5.1.6 Reverse polarity protection of motor bridge
The TLE7182EM provides an additional RPP pin to protect motor bridge for reverse polarity. This RPP pin can
drive an additional external N-channel power MOSFET designed in between battery and the motor bridge. The
RPP pin is internally supplied by the two integrated 100% D.C. charge pumps. They are especially designed to
handle additional current which is needed to drive a the gate charge of the reverse polarity MOSFET. The
guarantied output current of the charge pumps is specified.
5.1.7 Sleep mode
If ENA pin is set to low, the ERR flag will be set to low and the output stages will be switched off.
After ENA pin is kept low for t_LQM the sleep mode of the Driver IC will be activated.
In Sleep mode the complete chip is deactivated. This means the internal supply structure of the TLE7182EM will
be switched off. This mode is designed for lowest current consumption from the power net of the car. The passive
clamping is active. For details see the description of passive clamping, see Chapter 5.2.8.
The TLE7182EM will wake up, if ENA is set to high.The ENA pin is 45V compatible, so ENA can be directly be
connected to the ignition key signal KL15.
5.1.8 Electrical Characteristics
Electrical Characteristics MOSFET Drivers
V_S = 7.0 to 34V, T_j = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
Control inputs
5.1.1
5.1.2
5.1.3
5.1.4
Low level input voltage of Ixx
High level input voltage of Ixx
Input hysteresis of Ixx
ILx pull-down resistor to GND
V_{I_LL}
V_{I_HL}
d_VI
R_IL
–
–
1.0
V
–
2.0
–
–
V
–
100 200 –
mV –
320 540 770 kΩ V_VS=0V and
VDH=0V or open
5.1.5 ILx pull-down resistor to GND
R_IL
19
32
50
kΩ V_VS or VDH >5.0V
5.1.6 IHx pull-up resistor to internal VDD R_IH
30
–
80
kΩ –
5.1.7 Low level input voltage of ENA
V_{E_LL}
–
–
0.75 V
–
5.1.8 High level input voltage of ENA V_{E_HL}
2.1
–
–
V
–
5.1.9 Input hysteresis of ENA
d_VE
50
200 –
mV –
5.1.10 ENA pull-down resistor to GND R_IL
70
125 200 kΩ –
Data Sheet
12
Rev 1.1, 2010-09-30