TLE7182EM Datasheet, PDF (25/28 Pages) Infineon Technologies AG – H-Bridge and Dual Half Bridge Driver IC

H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Application Information
6.1
Layout Guide Lines
Please refer also to the simplified application example.
• Two separated bulk capacitors C_B should be used - one per half bridge
• Two separated ceramic capacitors C_C should be used - one per half bridge
• Each of the two bulk capacitors C_B and each of the two ceramic capacitors C_C should be assigned to one of
the half bridges and should be placed very close to it
• The components within one half bridge should be placed close to each other: high side MOSFET, low side
MOSFET, bulk capacitor C_B and ceramic capacitor C_C (C_B and C_C are in parallel) and the shunt resistor form
a loop that should be as small and tight as possible. The traces should be short and wide
• The connection between the source of the high side MOSFET and the drain of the low side MOSFET should
be as low inductive and as low resistive as possible.
• VDH is the sense pin used for short circuit detection; VDH should be routed (via Rvdh) to the common point
of the drains of the high side MOSFETs to sense the voltage present on drain high side
• SL is the sense pin used for short circuit detection; SL should be routed o the common point of the source of
the low side MOSFETs to sense the voltage present on source low side
• Additional R-C snubber circuits (R and C in series) can be placed to attenuate/suppress oscillations during
switching of the MOSFETs, there may be one or two snubber circuits per half bridge, R (several Ohm) and C
(several nF) must be low inductive in terms of routing and packaging (ceramic capacitors)
• if available the exposed pad on the backside of the package should be connected to GND
6.2
Further Application Information
• For further information you may contact http://www.infineon.com/
Data Sheet
25
Rev 1.1, 2010-09-30