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TLE7182EM Datasheet, PDF (25/28 Pages) Infineon Technologies AG – H-Bridge and Dual Half Bridge Driver IC
H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Application Information
6.1
Layout Guide Lines
Please refer also to the simplified application example.
• Two separated bulk capacitors CB should be used - one per half bridge
• Two separated ceramic capacitors CC should be used - one per half bridge
• Each of the two bulk capacitors CB and each of the two ceramic capacitors CC should be assigned to one of
the half bridges and should be placed very close to it
• The components within one half bridge should be placed close to each other: high side MOSFET, low side
MOSFET, bulk capacitor CB and ceramic capacitor CC (CB and CC are in parallel) and the shunt resistor form
a loop that should be as small and tight as possible. The traces should be short and wide
• The connection between the source of the high side MOSFET and the drain of the low side MOSFET should
be as low inductive and as low resistive as possible.
• VDH is the sense pin used for short circuit detection; VDH should be routed (via Rvdh) to the common point
of the drains of the high side MOSFETs to sense the voltage present on drain high side
• SL is the sense pin used for short circuit detection; SL should be routed o the common point of the source of
the low side MOSFETs to sense the voltage present on source low side
• Additional R-C snubber circuits (R and C in series) can be placed to attenuate/suppress oscillations during
switching of the MOSFETs, there may be one or two snubber circuits per half bridge, R (several Ohm) and C
(several nF) must be low inductive in terms of routing and packaging (ceramic capacitors)
• if available the exposed pad on the backside of the package should be connected to GND
6.2
Further Application Information
• For further information you may contact http://www.infineon.com/
Data Sheet
25
Rev 1.1, 2010-09-30