TLE7182EM Datasheet, PDF (13/28 Pages) Infineon Technologies AG – H-Bridge and Dual Half Bridge Driver IC

H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Description and Electrical Characteristics
Electrical Characteristics MOSFET Drivers
V_S = 7.0 to 34V, T_j = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
MOSFET driver output
5.1.11 Output source resistance
R_Sou
2
5.1.12 Output sink resistance
R_Sink
2
5.1.13 High level output voltage Gxx vs. V_Gxx1
–
Sxx
5.1.14 High level output voltage Gxx vs. V_Gxx2
–
Sxx
5.1.15 High level output voltage GHx vs. V_GHx3
–
SHx¹⁾
5.1.16 High level output voltage GLx vs. V_GLx3
–
GND¹⁾
–
13.5 Ω
–
9.0
Ω
11
15
V
11
13.5 V
V_VS-1.5 –
V
V_VS-0.5 –
V
I_Load=-20mA
I_Load=20mA
13.5V≤V_VS≤34V;
I_Load=0mA
13.5V≤V_VS≤34V;
C_Load=20nF;
D.C.=50%;
f_PWM=20kHz
7.0V<V_VS<13.5V;
C_Load=20nF;
D.C.=50%;
f_PWM=20kHz
7.0V<V_VS<13.5V;
C_Load=20nF;
f_PWM=20kHz &
D.C.=50%;
or D.C=100%
5.1.17 High level output voltage GHx vs. V_GHx4
5.0
–
–
V
V_VS=7.0V;
SHx¹⁾²⁾
+V_diode
C_Load=20nF;
D.C.=95%;
f_PWM=20kHz;
passive
freewheeling
5.1.18 High level output voltage GHx vs. V_GHx5
5.0
–
–
V
V_VS=7.0V;
SHx¹⁾
C_Load=20nF;
D.C.=95%;
f_PWM=20kHz
5.1.19 High level output voltage GLx vs. V_GLx5
6.0
–
–
V
V_VS=7.0V;
SLx¹⁾
C_Load=20nF;
D.C.=95%;
f_PWM=20kHz
5.1.20 High level output voltage GHx vs. V_GHx5
10
–
–
V
7.0V≤V_VS≤13.5V;
SHx¹⁾
C_Load=20nF;
D.C.=100%
5.1.21 High level output voltage GLx vs. V_GLx5
6.5
–
–
V
V_VS=7.0V;
SLx¹⁾
C_Load=20nF;
D.C.=100%
5.1.22 Rise time
5.1.23 Fall time
t_rise
–
250 –
ns
C_Load=11nF;
t_fall
–
200 –
ns
R_Load=1Ω;
V_VS=7V;
20-80%
Data Sheet
13
Rev 1.1, 2010-09-30