TLE7182EM Datasheet, PDF (14/28 Pages) Infineon Technologies AG – H-Bridge and Dual Half Bridge Driver IC

H-Bridge and Dual Half Bridge Driver IC
TLE7182EM
Description and Electrical Characteristics
Electrical Characteristics MOSFET Drivers
V_S = 7.0 to 34V, T_j = -40 to +150°C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
5.1.24 High level output voltage (in
passive clamping)¹⁾
V_GxxUV
–
–
1.2
V
Sleep mode or
VS_UVLO
5.1.25 Pull-down resistor at BHx to GND R_BHUVx –
–
85
kΩ Sleep mode or
VS_UVLO
5.1.26 Pull-down resistor at VREG to GND R_VRUV –
–
30
kΩ Sleep mode or
VS_UVLO
5.1.27 Bias current into BHx
I_BHx
–
–
150
µA
V_CBS>5V;
no switching
5.1.28 Bias current out of SHx
I_SHx
–
5.1.29 Bias current out of SL
I_SL
–
Dead time & input propagation delay times
40
–
µA
V_SHx=V_SL;
ENA=HIGH;
affected highside
output stage static
on;
V_CBS>5V
–
1.4
mA 0≤V_SHx≤V_VS+1V;
ENA=HIGH;
no switching;
V_CBS>5V
5.1.30
5.1.31
Min. internal dead time
Dead time deviation between
channels
t_{DT_MIN}
0.08 0.11 0.2
µs
–
d_tDT2
-15 –
15
%
–
5.1.32 Dead time deviation between
channels LSoff -> HS on
d_tDT2
-12 –
12
%
–
5.1.33 Dead time deviation between
channels HSoff -> LS on
d_tDT2
-12 –
12
%
–
5.1.34 Input propagation time (low on)
t_P(ILN)
0
5.1.35 Input propagation time (low off)
t_P(ILF)
0
5.1.36 Input propagation time (high on) t_P(IHN)
0
5.1.37 Input propagation time (high off) t_P(IHF)
0
5.1.38 Absolute input propagation time t_P(diff)
–
difference between above
propagation times
100 200 ns
100 200 ns
100 200 ns
100 200 ns
50
100 ns
C_Load=10nF;
R_Load=1Ω
VREG
5.1.39 VREG output voltage
5.1.40
5.1.41
VREG over current limitation
Voltage drop between Vs and
VREG
V_VREG
11
12.5 14
V
V_VS≥13.5V;
I_Load=-35mA
I_VREGOCL 100
–
500
mA
–³⁾
V_VsVREG –
–
0.5
V
V_VS≥7V;
I_Load=-35mA;
Ron operation
Data Sheet
14
Rev 1.1, 2010-09-30