SPP24N60CFD_09 Datasheet, PDF (8/12 Pages) Infineon Technologies AG – CoolMOS Power Transistor

13 Drain-source breakdown voltage
V _BR(DSS)=f(T _j); I _D=10 mA
700
660
14 Typ. capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
SPP24N60CFD
10⁴
Ciss
10³
620
10²
Coss
Crss
580
10¹
540
-60
-20
20
60 100 140 180
T _j [°C]
10⁰
0
100
200
300
400
500
V _DS [V]
15 Typ. C _oss stored energy
E _oss= f(V _DS)
16 Typ. reverse recovery charge
Q _rr=f(T _j);parameter: I _D =21.7 A
18
1.2
15
1.1
12
9
1
6
0.9
3
Rev. 1.3
0
0
100 200 300 400 500 600
V _DS [V]
0.8
25
page 8
50
75
100
125
T _j [°C]
2009-12-01