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SPP24N60CFD_09 Datasheet, PDF (5/12 Pages) Infineon Technologies AG – CoolMOS Power Transistor
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1 Power dissipation
P tot=f(T C)
250
200
150
100
50
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
limited by on-state
resistance
101
DC
SPP24N60CFD
1 µs
10 µs
100 µs
1 ms
10 ms
100
0
0
40
80
120
T C [°C]
3 Max. transient thermal impedance
I D=f(V DS); T j=25 °C
parameter: D=t p/T
100
0.5
0.2
10-1
0.1
0.05
0.02
0.01
single pulse
10-2
10-5
10-4
10-3
10-2
t p [s]
Rev. 1.3
10-1
160
100
101
102
V DS [V]
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
50
20 V
45
10 V
40
8V
35
30
25
20
7V
15
10
5
0
10-1
0
6.5 V
6V
5.5 V
5V
5
10
15
V DS [V]
page 5
103
20
2009-12-01
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