SPP24N60CFD_09 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – CoolMOS Power Transistor

SPP24N60CFD
CoolMOS^TM Power Transistor
Features
• Intrinsic fast-recovery body diode
• Extremely low reverse recovery charge
• Ultra low gate charge
Product Summary
V _DS @ Tjmax
R _DS(on),max
I_D
• Extreme dv /dt rated
• High peak current capability
• Qualified for industrial grade applications according to JEDEC¹⁾
650 V
0.185 "
21.7 A
PG-TO220
• CoolMOS CFD designed for
• Softswitching PWM Stages
• LCD & CRT TV
Type
SPP24N60CFD
Package
TPOG-2T2O0220
Marking
24N60CFD
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current²⁾
Avalanche energy, single pulse
Avalanche energy, repetitive^2),3)
Avalanche current, repetitive^2),3)
I_D
I _D,pulse
E _AS
E _AR
I _AR
T _C=25 °C
T _C=100 °C
T _C=25 °C
I _D=10A, V _DD=50 V
I _D=20A, V _DD=50 V
Drain source voltage slope
dv /dt
I _D=21.7A, V _DS=480V,
T _j=125°C
Reverse diode dv /dt
dv /dt
Maximum diode commutation speed di /dt
I _S=21.7A, V _DS=480 V,
T _j=125°C
Gate source voltage
V _GS
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P _tot
T _C=25 °C
T _j, T _stg
Mounting torque
M3 & M3.5 screws
Value
21.7
13.7
55
780
1
20
80
40
600
±20
±30
240
-55 ... 150
60
Unit
A
mJ
A
V/ns
V/ns
A/µs
V
W
°C
Ncm
Rev. 1.3
page 1
2009-12-01