SPP24N60CFD_09 Datasheet, PDF (6/12 Pages) Infineon Technologies AG – CoolMOS Power Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _j=150 °C
parameter: V _GS
35
30
25
20 V
10 V
8V
7V
20
SPP24N60CFD
6 Typ. drain-source on-state resistance
R _DS(on)=f(I _D); T _j=150 °C
parameter: V _GS
1.2
1
0.8
15
6.5 V
0.6
5V
5.5 V
6V
6.5 V
7V
6V
10
10 V
20 V
5.5 V
0.4
5
5V
0
0.2
0
5
10
15
20
0
5
10
15
20
25
V _DS [V]
I _D [A]
7 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=15.4 A; V _GS=10 V
0.6
8 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
80
25 °C
0.5
60
0.4
0.3
40
98 %
0.2
typ
20
0.1
150 °C
Rev. 1.3
0
-60 -20
20
60 100 140 180
T _j [°C]
0
0
2
4
6
8 10 12 14
V _GS [V]
page 6
2009-12-01