SPP24N60CFD_09 Datasheet, PDF (7/12 Pages) Infineon Technologies AG – CoolMOS Power Transistor

9 Typ. gate charge
V _GS=f(Q _gate); I _D=21.7 A pulsed
parameter: V _DD
10
120 V
8
480 V
6
4
2
SPP24N60CFD
10 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
10²
150 °C, 98%
25 °C
10¹
150 °C
25 °C, 98%
10⁰
0
10^-1
0
25
50
75
100
125
0
0.5
1
1.5
2
Q _gate [nC]
V _SD [V]
11 Avalanche SOA
I _AR=f(t _AR)
parameter: T _j(start)
20
12 Avalanche energy
E _AS=f(T _j); I _D=10 A; V _DD=50 V
800
700
16
600
12
500
400
125 °C
25 °C
8
300
200
4
100
Rev. 1.3
0
10^-3 10^-2 10^-1 10⁰ 10¹ 10² 10³ 10⁴
t _AR [µs]
0
25 50 75 100 125 150 175 200
T _j [°C]
page 7
2009-12-01