SPP24N60CFD_09 Datasheet, PDF (3/12 Pages) Infineon Technologies AG – CoolMOS Power Transistor

Parameter
Symbol Conditions
SPP24N60CFD
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
C _iss
-
C _oss
V _GS=0 V, V _DS=25 V,
f =1 MHz
-
C _rss
-
Effective output capacitance, energy
related⁴⁾
C _o(er)
-
V _GS=0 V, V _DS=0 V
to 480 V
Effective output capacitance, time
related⁵⁾
C _o(tr)
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t _d(on)
-
t_r
V _DD=400 V,
-
V _GS=10 V, I _D= 21.7A,
t _d(off)
R _G=6.8 "
-
t_f
-
3160
900
34
103
188
50
24
100
9
- pF
-
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q _gs
Q _gd
Q_g
V _plateau
V _DD=480 V,
I _D=21.7 A,
V _GS=0 to 10 V
-
15
- nC
-
67
-
-
110
143
-
7.3
-V
1) _{J-STD20 and JESD22}
2) _{Pulse width t p limited by T j,max}
3) _{Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.}
4) _{C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.}
5) _{C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.}
Rev. 1.3
page 3
2009-12-01