SPP08P06P Datasheet, PDF (8/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

Preliminary data
SPP08P06P
SPB08P06P
Avalanche energy
E_AS = f (T_j)
para.: I_D = -8.8 A , V_DD = -25 V, R_GS = 25 W
80
Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = -8.8 A pulsed
SPP08P06P
-16
mJ
V
60
-12
50
-10
40
-8
0,2 V_{DS max}
0,8 V_{DS max}
30
-6
20
-4
10
-2
0
25 45 65 85 105 125 145 _°C 185
T_j
Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
0
0
2
4
6
8 10 12 _nC 15
Q_Gate
SPP08P06P
-72
V
-68
-66
-64
-62
-60
-58
-56
-54
-60 -20
20
60 100 140 °C 200
T_j
Page 8
1999-11-22