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SPP08P06P Datasheet, PDF (4/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor
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Preliminary data
SPP08P06P
SPB08P06P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
VDD = -48 , ID = -8.8 A
Gate to drain charge
VDD = -48 V, ID = -8.8 A
Gate charge total
VDD = -48 V, ID = -8.8 A, VGS = 0 to -10 V
Gate plateau voltage
VDD = -48 , ID = -8.8 A
Qgs
-
1.4 2.1 nC
Qgd
-
4
6
Qg
-
10 15
V(plateau) -
-3.85
-V
Parameter
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
Inverse diode direct current,pulsed
TC = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = -8.8 A
Reverse recovery time
VR = -30 V, IF=IS , diF/dt = 100 A/µs
Reverse recovery charge
VR = -30 V, IF=lS , diF/dt = 100 A/µs
Symbol
Values
Unit
min. typ. max.
IS
-
- -8.8 A
ISM
-
- -35.2
VSD
- -1.17 -1.55 V
trr
-
60 90 ns
Qrr
- 100 150 nC
Page 4
1999-11-22
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