SPP08P06P Datasheet, PDF (7/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

Preliminary data
SPP08P06P
SPB08P06P
Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = -6.2 A, V_GS = -10 V
SPP08P06P
1.0
W
0.8
Gate threshold voltage
V_GS(th) = f (T_j)
parameter: V_GS = V_DS, I_D = -250 µA
-5.0
V
98%
-4.0
0.7
-3.5
typ
0.6
-3.0
0.5
0.4
98%
typ
0.3
-2.5
2%
-2.0
-1.5
0.2
-1.0
0.1
-0.5
0.0
-60 -20
20
60 100 140 ^°C 200
T_j
Typ. capacitances
C = f (V_DS)
parameter: V_GS=0V, f=1 MHz
10 ³
0.0
-60 -20
20
60 100 _°C 180
T_j
Forward characteristics of reverse diode
I_F = f (V_SD)
parameter: T_j , tp = 80 µs
-10 ^{2 SPP08P06P}
A
pF
C_iss
-10 ¹
10 ²
10 ¹
0
C_oss
C_rss
-10 ⁰
T_j = 25 °C typ
T_j = 175 °C typ
T_j = 25 °C (98%)
T_j = 175 °C (98%)
-5 -10 -15 -20 -25 -30 ^V -40
V_DS
-10 ^-1
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0
V_SD
Page 7
1999-11-22