SPP08P06P Datasheet, PDF (3/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

Preliminary data
SPP08P06P
SPB08P06P
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V_DS³2*I_D*R_DS(on)max , I_D = -6.2 A
Input capacitance
V_GS = 0 V, V_DS = -25 V, f = 1 MHz
Output capacitance
V_GS = 0 V, V_DS = -25 V, f = 1 MHz
Reverse transfer capacitance
V_GS = 0 V, V_DS = -25 V, f = 1 MHz
Turn-on delay time
V_DD = -30 V, V_GS = -10 V, I_D = -6.2 A,
R_G = 6 W
Rise time
V_DD = -30 V, V_GS = -10 V, I_D = -6.2 A,
R_G = 6 W
Turn-off delay time
V_DD = -30 V, V_GS = -10 V, I_D = -6.2 A,
R_G = 6 W
Fall time
V_DD = -30 V, V_GS = -10 V, I_D = -6.2 A,
R_G = 6 W
g_fs
C_iss
C_oss
C_rss
t_d(on)
1.5 3.6
-S
- 335 420 pF
- 105 135
-
65 95
-
16 24 ns
t_r
-
46 69
t_d(off)
-
48 72
t_f
-
14 21
Page 3
1999-11-22