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SPP08P06P Datasheet, PDF (5/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor
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Power dissipation
Ptot = f (TC)
SPP08P06P
50
W
Preliminary data
Drain current
ID = f (TC)
parameter: VGS³ 10 V
SPP08P06P
-10
A
SPP08P06P
SPB08P06P
40
35
30
25
20
15
10
5
0
0
20 40 60 80 100 120 140 160°C 190
TC
Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
-10 2 SPP08P06P
A
tp = 12.0µs
-8
-7
-6
-5
-4
-3
-2
-1
0
0
20 40 60 80 100 120 140 160°C 190
TC
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SPP08P06P
K/W
10 0
-10 1
100 µs
10 -1
-10 0
1 ms
10 ms
DC
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
-10
-1
-10
-1
-10 0
-10 1
V -10 2
VDS
Page 5
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
1999-11-22
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