SPP08P06P Datasheet, PDF (6/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

Preliminary data
SPP08P06P
SPB08P06P
Typ. output characteristic
I_D = f (V_DS); T_j=25°C
parameter: t_p = 80 µs
SPP08P06P
-21 _{Ptot = 42.00W}
A
-18
j
i
-16
-14
-12
-10
-8
-6
-4
-2
0
0
-2
-4
-6
V_GS [V]
a
b
h_c
d
ge
f
f^g
h
eⁱ
j
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-7.5
-8.0
-10.0
d
c
b
a
-8 V -11
V_DS
Typ. drain-source-on-resistance
R_DS(on) = f (I_D)
parameter: V_GS
SPP08P06P
1.0
W
abc d
e
f
g
h
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V_GS [V] =
0.1 a b c d e f g h i
j
ij
-4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -10.0
0.0
0
-2
-4
-6
-8 -10 -12 -14 A
-18
I_D
Typ. transfer characteristics I_D= f ( V_GS )
V_DS³ 2 x I_D x R_DS(on)max
parameter: t_p = 80 µs
-30
A
Typ. forward transconductance
g_fs = f(I_D); T_j=25°C
parameter: g_fs
6
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0 -1 -2 -3 -4 -5 -6 -7 -8 _V -10
V_GS
S
4
3
2
1
0
0 -2 -4 -6 -8 -10 -12 -14 -16 _A -20
I_D
Page 6
1999-11-22