SPP06N60C3 Datasheet, PDF (8/11 Pages) Infineon Technologies AG – CoolMOS Power Transistor

13 Drain-source breakdown voltage
V _BR(DSS)=f(T _j); I _D=0.25 mA
700
14 Typ. capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
10⁴
SPP06N60C3
660
10³
Ciss
620
10²
Coss
580
10¹
Crss
540
-60 -20
20
60 100 140 180
T _j [°C]
15 Typ. C _oss stored energy
E _oss= f(V _DS)
10⁰
0
100
200
300
400
500
V _DS [V]
5
4
3
2
1
0
0
100 200 300 400 500 600
V _DS [V]
Rev. 1.4
page 8
2005-09-21