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SPP06N60C3 Datasheet, PDF (7/11 Pages) Infineon Technologies AG – CoolMOS Power Transistor
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9 Typ. gate charge
V GS=f(Q gate); I D=6.2 A pulsed
parameter: V DD
12
SPP06N60C3
10 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
102
10
25 °C
25 °C, 98%
120 V
480 V
8
101
150 °C, 98%
150 °C
6
4
100
2
0
0
10
20
Q gate [nC]
11 Avalanche SOA
I AR=f(t AR)
parameter: T j(start)
8
10-1
30
0
0.5
1
1.5
2
2.5
V SD [V]
12 Avalanche energy
E AS=f(T j); I D=3.1 A; V DD=50 V
250
200
6
150
4
100
125 °C
25 °C
2
50
0
10-3
10-2
10-1
100
101
102
103
t AR [µs]
0
20
Rev. 1.4
page 7
60
100
140
180
T j [°C]
2005-09-21
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