SPP06N60C3 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – CoolMOS Power Transistor

Parameter
Symbol Conditions
SPP06N60C3
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R _thJC
-
R _thJA leaded
-
Thermal resistance, junction -
ambient
SMD version, device
R _thJA on PCB, minimal
-
footprint
SMD version, device
on PCB, 6 cm² cooling -
area³⁾
Soldering temperature^{4) wavesoldering}
T _sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
1.7 K/W
-
62
-
62
35
-
-
260 °C
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V _(BR)DSS V _GS=0 V, I _D=250 µA
600
-
Avalanche breakdown voltage
V _(BR)DS V _GS=0 V, I _D=6.2 A
-
700
-V
-
Gate threshold voltage
V _GS(th) V _DS=V _GS, I _D=0.26 mA 2.1
3
3.9
Zero gate voltage drain current
I _DSS
V _DS=600 V, V _GS=0 V,
T _j=25 °C
-
V _DS=600 V, V _GS=0 V,
T _j=150 °C
-
Gate-source leakage current
I _GSS
V _GS=20 V, V _DS=0 V
-
Drain-source on-state resistance
R _DS(on)
V _GS=10 V, I _D=3.9 A,
T _j=25 °C
-
Gate resistance
Transconductance
V _GS=10 V, I _D=3.9 A,
T _j=150 °C
-
R_G
f =1 MHz, open drain
-
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=3.9 A
-
0.1
1 µA
-
100
-
100 nA
0.68 0.75 Ω
1.82
-
1
-
5.6
-S
Rev. 1.4
page 2
2005-09-21