SPP06N60C3 Datasheet, PDF (6/11 Pages) Infineon Technologies AG – CoolMOS Power Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _j=150 °C
parameter: V _GS
8
20 V
7V
6.5 V
6
SPP06N60C3
6 Typ. drain-source on-state resistance
R _DS(on)=f(I _D); T _j=150 °C
parameter: V _GS
6V
5.5 V
4
4V
4.5 V
5V
5.5 V
6V
3
5V
20 V
4
2
4.5 V
2
1
4V
0
0
5
10
15
V _DS [V]
7 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=3.9 A; V _GS=10 V
2
0
20
0
2
4
6
I _D [A]
8 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
25
1.6
20
8
10
25 °C
1.2
15
98 %
0.8
typ
10
0.4
5
150 °C
0
-60 -20 20
60 100 140 180
T _j [°C]
0
0
2
4
6
8
10
V _GS [V]
Rev. 1.4
page 6
2005-09-21