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SPP06N60C3 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – CoolMOS Power Transistor
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1 Power dissipation
P tot=f(T C)
80
60
40
20
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
limited by on-state
resistance
101
100
DC
10-1
SPP06N60C3
1 µs
10 µs
100 µs
1 ms
10 ms
0
0
40
80
120
T C [°C]
3 Max. transient thermal impedance
I D=f(V DS); T j=25 °C
parameter: D=t p/T
101
100 0.5
0.2
0.1
10-1
0.05
0.02
0.01 single pulse
10-2
160
100
101
102
V DS [V]
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
20
16
103
20 V
7V
6.5 V
12
6V
8
5.5 V
4
5V
10-2
0
10-6
10-5
10-4
10-3
10-2
10-1
100
0
t p [s]
Rev. 1.4
page 5
4.5 V
4V
5
10
15
20
V DS [V]
2005-09-21
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