SPP06N60C3 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – CoolMOS Power Transistor

Parameter
Symbol Conditions
SPP06N60C3
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
C _iss
-
620
- pF
C _oss
V _GS=0 V, V _DS=25 V,
f =1 MHz
-
200
-
C _rss
-
17
-
Effective output capacitance, energy
related⁵⁾
C _o(er)
Effective output capacitance, time
related⁶⁾
C _o(tr)
V _GS=0 V, V _DS=0 V
to 480 V
-
28
-
-
47
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t _d(on)
-
7
- ns
t_r
V _DD=480 V,
-
12
-
V _GS=10 V, I _D=6.2 A,
t _d(off)
R _G=12 Ω
-
52
-
t_f
-
10
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q _gs
-
Q _gd
V _DD=480 V, I _D=6.2 A,
-
Q_g
V _GS=0 to 10 V
-
V _plateau
-
3.3
- nC
12
-
24
31
5.5
-V
1) _{Pulse width limited by maximum temperature T j,max only}
2) _{Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.}
3) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
4) _{Soldering temperature for TO263: 220 °C, reflow}
5) _{C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.}
6) _{C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.}
8) _{ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.}
Identical low-side and high-side switch.
Rev. 1.4
page 3
2005-09-21