SPP04N60S5_07 Datasheet, PDF (8/11 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

SPP04N60S5
13 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
SPP04N60S5
720
V
14 Avalanche power losses
P_AR = f (f )
parameter: E_AR=0.4mJ
200
W
680
660
640
620
600
580
560
540
-60 -20
20
60 100
15 Typ. capacitances
C = f (V_DS)
parameter: V_GS=0V, f=1 MHz
10 ⁴
pF
°C
180
T_j
10 ³
C_iss
150
125
100
75
50
25
0
10
4
10 ⁵
16 Typ. C_oss stored energy
E_oss=f(V_DS)
3.5
µJ
2.5
Hz
10 ⁶
f
10 ²
10 ¹
C_oss
C_rss
10 ⁰
0
100 200 300 400
Rev. 2.6
V
600
V_DS
Page 8
2
1.5
1
0.5
0
0
100 200 300 400 _V
600
V_DS
2007-08-30