SPP04N60S5_07 Datasheet, PDF (4/11 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

SPP04N60S5
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Inverse diode continuous
forward current
I_S
T_C=25°C
-
-
4.5 A
Inverse diode direct current,
I_SM
pulsed
-
-
9
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V_SD
t_rr
Q_rr
V_GS=0V, I_F=I_S
V_R=350V, I_F=I_S ,
di_F/dt=100A/µs
-
1
1.2 V
-
900 1530 ns
-
3.2
- µC
Typical Transient Thermal Characteristics
Symbol
Value
Unit Symbol
Value
typ.
typ.
Thermal resistance
Thermal capacitance
R_th1
R_th2
R_th3
R_th4
R_th5
R_th6
0.039
0.074
0.132
0.555
0.529
0.169
K/W
C_th1
C_th2
C_th3
C_th4
C_th5
C_th6
0.00007347
0.0002831
0.0004062
0.001215
0.00276
0.029
Unit
Ws/K
P_tot (t)
T_j R _th1
C _{th 1}
C _{th 2}
R_{th,n Tcase} ^{External Heatsink}
C _{th ,n}
T_amb
Rev. 2.6
Page 4
2007-08-30