SPP04N60S5_07 Datasheet, PDF (6/11 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

SPP04N60S5
5 Typ. output characteristic
I_D = f (V_DS); T_j=150°C
parameter: t_p = 10 µs, V_GS
8
20V
12V
10V
A
9.5V
9V
8.5V
6 Typ. drain-source on resistance
R_DS(on)=f(I_D)
parameter: T_j=150°C, V_GS
5
mΩ
4
3.5
8V
4
7.5V
7V
2
6.5V
6V
0
0
5
10
15
V
25
V_DS
3
20V
12V
2.5
10V
9V
8.5V
2
8V
7.5V
1.5
7V
6.5V
6V
1
0 1 2 3 4 5 6 7 _A 8.5
I_D
7 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 2.8 A, V_GS = 10 V
SPP04N60S5
5.5
Ω
8 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
16
A
4.5
12
4
3.5
10
3
8
2.5
2
6
1.5
98%
4
1
typ
2
0.5
0
-60 -20 20
60 100 °C
180
T_j
Rev. 2.6
Page 6
0
0 2 4 6 8 10 12 14 16 _V 20
V_GS
2007-08-30