SPP04N60S5_07 Datasheet, PDF (7/11 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

SPP04N60S5
9 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 4.5 A pulsed
SPP04N60S5
16
V
0.2 V_{DS max}
12 ^{0.8 VDS max}
10
10 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{1 SPP04N60S5}
A
10 ⁰
8
6
4
2
0
0
4
8
12 16 20 nC 26
Q_Gate
10 ^-1
10 ^-2
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
11 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
5
A
12 Avalanche energy
E_AS = f (T_j)
par.: I_D = 3.4 A, V_DD = 50 V
160
mJ
4
T_j(START)=25°C
120
3.5
3
100
2.5
80
2
T_j(START)=125°C
60
1.5
40
1
20
0.5
0
10
-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
10 ²
Rev. 2.6
µs ^{10 4}
t_AR
Page 7
0
20 40 60 80 100 120 °C 160
T_j
2007-08-30