SPP04N60S5_07 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

SPP04N60S5
Electrical Characteristics , at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Characteristics
Transconductance
g_fs
V_DS≥2*I_D*R_DS(on)max,
-
2.5
-S
I_D=2.8A
Input capacitance
C_iss
V_GS=0V, V_DS=25V,
- 580 - pF
Output capacitance
C_oss
f=1MHz
- 220 -
Reverse transfer capacitance C_rss
-
7
-
Effective output capacitance,⁴⁾ C_o(er) VGS=0V,
-
20
- pF
energy related
V_DS=0V to 480V
Effective output capacitance,⁵⁾ C_o(tr)
-
35
-
time related
Turn-on delay time
Rise time
t _d(on)
V_DD=350V, V_GS=0/10V,
-
55
- ns
I_D=4.5A, R_G=18Ω
t_r
V_DD=350V, V_GS=0/10V,
-
30
-
Turn-off delay time
Fall time
I_D=4.5A, R_G=18
t _d(off)
V_DD=350V, V_GS=0/10V,
-
t_f
I_D=4.5A, R_G=18Ω
-
60 90
15 22.5
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q_gs
Q_gd
V_DD=350V, I_D=4.5A
Gate charge total
Q_g
V_DD=350V, I_D=4.5A,
V_GS=0 to 10V
Gate plateau voltage
V_(plateau) V_DD=350V, I_D=4.5A
-
4.5
- nC
-
11
-
- 17.6 22.9
-
8
-V
1Repetitve _{avalanche causes additional power losses that can be calculated as PAV=EAR*f.}
2Device _{on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical without blown air.
3Soldering _{temperature for TO-263: 220°C, reflow}
4_{Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.}
5_{Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.}
Rev. 2.6
Page 3
2007-08-30