SPP04N60S5_07 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

SPP04N60S5
Maximum Ratings
Parameter
Drain Source voltage slope
V_DS = 480 V, I_D = 4.5 A, T_j = 125 °C
Symbol
dv/dt
Value
20
Unit
V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm² cooling area ²⁾
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s³⁾
Symbol
R_thJC
R_thJA
R_thJA
T_sold
Values
Unit
min. typ. max.
-
-
2.5 K/W
-
-
62
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage ^V_(BR)DSS ^V_GS^{=0V, I}_D^{=0.25mA 600}
-
Drain-Source avalanche
V_(BR)DS ^V_GS^{=0V, I}_D^=4.5A
-
700
breakdown voltage
-V
-
Gate threshold voltage
V_GS(th) I_D=200µΑ, V_GS=V_DS 3.5
4.5
5.5
Zero gate voltage drain current I_DSS
V_DS=600V, V_GS=0V,
µA
T_j=25°C,
-
0.5
1
T_j=150°C
-
-
50
Gate-source leakage current
I_GSS
V_GS=20V, V_DS=0V
-
- 100 nA
Drain-source on-state resistance R_DS(on) V_GS=10V, I_D=2.8A,
Ω
T_j=25°C
- 0.85 0.95
T_j=150°C
-
2.3
-
Gate input resistance
R_G
f=1MHz, open Drain
-
20
-
Rev. 2.6
Page 2
2007-08-30