PTF080451 Datasheet, PDF (8/9 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

PTF080451
Ordering Information
Type
PTF080451E
Package Outline
30265
Package Description
Thermally enhanced, flange mount
Marking
PTF080451E
Package Outline Specifications
2X 2.59±0.38
[.107 ±.015]
15. 60±0.51
[.614±.020]
Package 30265
(45° X 2.03
[. 080])
7. 11
[. 280]
CL
D
FLANGE 9.78
[. 385]
S
LID 10.16±0.25
CL ^{[.400±.010]}
2X R1.60
[.063]
G
2x 7.11
[.280]
4x 1.52
[.060]
15. 23
[. 600]
10.16±0.25
[.400±.010]
SPH 1.57
[.062]
0.0381 [.0015] -A-
1.02
[. 040]
0.51
[. 020]
20. 31
[. 800]
3. 48±0.38
[. 137±.015]
H-3 0 2 6 5 - 2 - 1 - 2 3 0 3
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001]
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Data Sheet
8 of 9
2004-06-24