PTF080451 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

PTF080451
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V_DD = 28 V, I_DQ = 450 mA, f₁ = 959 MHz, f₂ = 960 MHz
0
-10
3rd Order
-20
-30
5th
-40
7th
-50
-60
-70
-80
36 38 40 42 44 46 48
Output Power (dBm), PEP
Typical P_OUT, Gain & Efficiency (at P-1dB)
vs. Frequency
V_DD = 28 V, I_DQ = 450 mA
18
80
17 ^Gain
16
70
Ef f iciency
60
15
Output Pow er ₅₀
14
860
880
900
920
940
Frequency (MHz)
40
960
IM3 vs. Output Power at Selected Biases
V_DD = 28 V, f₁ = 959, f₂ = 960 MHz
-20
-25
-30
-35
350 mA
-40
450 mA
-45
-50
-55
550 mA
-60
36
38
40
42
44
46
Output Power (dBm), PEP
Broadband Performance
V_DD = 28 V, I_DQ = 450 mA, P_OUT = 22.5 W
60
0
50
-4
Ef f iciency
40
-8
Return Loss
30
-12
20
Gain
10
860 880
900 920 940
Frequency (MHz)
-16
-20
960
All published data at T_CASE = 25°C unless otherwise indicated.
Data Sheet
3 of 9
2004-06-24