PTF080451 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

Typical Performance (cont.)
Power Sweep
V_DD = 28 V, f = 960 MHz
19.5
19.0
I_DQ = 560 mA
18.5
18.0
17.5
17.0
I_DQ = 340 mA
I_DQ = 450 mA
16.5
30
34
38
42
46
50
Output Power (dBm)
PTF080451
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 450 mA, f = 960 MHz
21
20
19 ^Gain
18
17
16 _Efficiency
15
14
30
35
40
45
Output Power (dBm)
70
60
50
40
30
20
10
0
50
Output Power (at 1 dB Compression)
vs. Supply Voltage
I_DQ = 450 mA, f = 960 MHz
49.5
49.0
48.5
48.0
47.5
47.0
46.5
24
26
28
30
32
Supply Voltage (V)
IS-95 CDMA Performance
V_DD = 28 V, I_DQ = 450 mA, f = 880 MHz
56
-40
48
ACP F_C – 0.75 MHz
-45
40
-50
32
-55
Ef f icienc y
24
-60
16
8
0
36
-65
ACPR F_C + 1.98 MHz
-70
38
40
Output Power (dBm), Avg.
-75
42
All published data at T_CASE = 25°C unless otherwise indicated.
Data Sheet
4 of 9
2004-06-24