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PTF080451 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz | |||
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PTF080451
LDMOS RF Power Field Effect Transistor
45 W, 869â960 MHz
Description
Features
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
EDGE Modulation Spectrum Performance
VDD = 28 V, IDQ = 450 mA, f = 959.8 MHz
0
55
Ef f ic iency
-10
50
-20
45
-30
40
-40
35
400 kHz
-50
30
-60
600 kHz 25
-70
20
-80
15
-90
10
36 38 40 42 44 46 48 50
Output Power (dBm)
⢠Broadband internal matching
⢠Typical EDGE performance
- Average output power = 22.5 W
- Gain = 18 dB
- Efficiency = 40%
⢠Typical CW performance
- Output power at Pâ1dB = 60 W
- Gain = 17 dB
- Efficiency = 60%
⢠Integrated ESD protection: Human Body
Model, Class 1 (minimum)
⢠Excellent thermal stability
⢠Low HCI drift
⢠Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
PTF080451E
Package 30265
ESD: Electrostatic discharge sensitive deviceâobserve handling precautions!
RF Characteristics at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production testâverified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 22.5 W, f = 959.8 MHz
Characteristic
Symbol Min Typ
Max Units
Error Vector Magnitude
EVM (RMS) â
2.0
â
%
Modulation Spectrum @ 400 kHz
ACPR
â
â62
â
dBc
Modulation Spectrum @ 600 kHz
ACPR
â
â76
â
dBc
Gain
Drain Efficiency
Gps
â
18
â
dB
ηD
â
40
â
%
TwoâTone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Gain
Drain Efficiency
Intermodulation Distortion
Gps
ηD
IMD
17
18
40
42
â
â32
Data Sheet
1 of 9
Max
â
â
â30
Units
dB
%
dBc
2004-06-24
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