PTF080451 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

PTF080451
Typical Performance (cont.)
Three-Carrier CDMA 2000 Performance
V_DD = 28 V, I_DQ = 450 mA, f = 880 MHz
55
-41
ACP Up
50
-44
45
ALT Up _-47
40
ACP Low
-50
35
-53
30
-56
25
Efficiency _-59
20
-62
15
-65
36 37 38 39 40 41 42 43 44 45
Output Power (dBm), PEP
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
0.75 A
1.02
1.50 A
2.25 A
1.01
3.00 A
1.00
3.75 A
4.50 A
0.99
0.98
0.97
0.96
-20
0
20 40 60 80 100
Case Temperature (ºC)
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
860
920
940
960
980
Z Source Ω
R
jX
8.20
-1.70
8.30
-0.12
8.40
0.38
8.50
0.85
8.70
1.40
Z Load Ω
R
jX
3.00
0.70
3.10
1.60
3.10
1.90
3.20
2.20
3.20
2.40
Z₀ = 50 Ω
Z Load
980 MHz
860 MHz
Z Source
980 MHz
860 MHz
0.1
All published data at T_CASE = 25°C unless otherwise indicated.
Data Sheet
5 of 9
2004-06-24