PTF080451 Datasheet, PDF (6/9 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz

PTF080451
Test Circuit
V_DD
C14
.01µF
QQ1 ^C16
LM7805 ^.01µF
C15
.01µ₁F_.0kRV6
R5
1.3kV
Q1
BCP56
R3
10V
R4
2kV
R1
10V
+^{C1 C2}
R2
10µF 0.1µF 1kV
35V 50V
RF_IN
C4
33pF
l1
l2
3C33pF
l4
l3
l5
C5
5.1pF
C6
33pF
L1
C7
1µF
+C8
10µF
35V
C9
+ C10
V_DD
0.1µF
10µF
50V
35V
l7
DUT
l6
C13
33pF
l8
l9
RF_OUT
C11
1.2pF
C12
1.0pF
0 8 0 4 5 1 _ sch
Test Circuit Schematic for 960 MHz
Circuit Assembly Information
DUT
PCB
PTF080451
ε 0.76 mm. [.030”] thick, _r = 4.5
LDMOS Transistor
2 oz. copper
Rogers TMM4
Microstrip
l1
l2
l3
l4
l5
l6
l7
l8
l9
Electrical Characteristics at 960 MHz
0.075 λ, 50.770 Ω
0.114 λ, 50.770 Ω
0.050 λ, 50.770 Ω
0.289 λ, 73.660 Ω
0.060 λ, 9.350 Ω
0.199 λ, 9.190 Ω
0.132 λ, 52.470 Ω
0.134 λ, 38.020 Ω
0.029 λ, 50.200 Ω
Dimensions: L x W (mm.)
0.505 x 0.053
0.765 x 0.053
0.335 x 0.053
2.000 x 0.025
0.360 x 0.506
1.200 x 0.510
0.890 x 0.050
0.880 x 0.085
0.195 x 0.054
Dimensions: L x W (in.)
12.83 x 1.35
19.43 x 1.35
8.51 x 1.35
50.80 x 0.64
9.14 x 12.85
30.48 x 12.95
22.61 x 1.27
22.35 x 2.16
4.95 x 1.37
Data Sheet
6 of 9
2004-06-24