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BTM7710GP Datasheet, PDF (8/18 Pages) Infineon Technologies AG – TrilithIC
BTM7710GP
4
Circuit Description
4.1
Input Circuit
The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are
driven by these stages and convert the logic signal into the necessary form for driving the power output stages.
The inputs are protected by ESD clamp-diodes. The inputs IL1 and IL2 are connected to the gates of the standard
N-channel vertical power-MOS-FETs.
4.2
Output Stages
The output stages consist of an low RDSON Power-MOS H-bridge. In H-bridge configuration, the D-MOS body
diodes can be used for freewheeling when communicating inductive loads. If the high-side switches are used as
single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by
integrated power clamp diodes.
4.3
Short Circuit Protection
The outputs are protected against short circuit to ground and short circuit over load
An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-Voltage-Drop with an internal
reference voltage. Above this trip point the OP-Amp reduces the output current depending on the junction
temperature and the drop voltage.
4.4
Overtemperature Protection
The high-side switches also incorporate an over temperature protection circuit with hysteresis which switches off
the output transistors and sets the status output to low.
4.5
Undervoltage Lockout
When VS reaches the switch-on voltage VUVON the IC becomes active with a hysteresis. The high-side output
transistors are switched off if the supply voltage VS drops below the switch off value VUVOFF.
4.6
Status Flag
The status flag output is an open drain output with zener-diode which requires a pull-up resistor, as shown in the
application circuit in Figure 4 “Application Example BTM7710GP” on Page 15. Various errors as listed in the
table “Diagnosis” are reported by switching the open drain output ST to low.
Datasheet
8
Rev. 1.0, 2008-07-07