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BTM7710GP Datasheet, PDF (12/18 Pages) Infineon Technologies AG – TrilithIC
BTM7710GP
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 110 °C; 8 V < VS < 18 V
unless otherwise specified
Pos. Parameter
Symbol Limit Values
min. typ.
Current Consumption LS-switch
5.4.9 Input current
IIL
–
10
5.4.10 Leakage current of low-side switch IDL LK
–
–
Under Voltage Lockout HS-switch
5.4.11 Switch-ON voltage
5.4.12 Switch-OFF voltage
5.4.13 Switch ON/OFF hysteresis
Output stages
VUVON
VUVOFF
VUVHY
–
–
1.8 –
–
1
5.4.14 Inverse diode of high-side switch; VFH
Forward-voltage
–
0.8
5.4.15 Inverse diode of low-side switch;
VFL
Forward-voltage
–
0.8
5.4.16 Static drain-source on-resistance of RDS ON H –
70
high-side switch
–
110
5.4.17 Static drain-source
RDS ON L
–
40
on-resistance of low-side switch
–
50
max.
100
10
4.8
3.5
–
1.2
1.2
–
165
–
75
Unit Test Condition
nA VIL = 20 V;
VDSL = 0V
μA VIL = 0 V
VDSL = 40V
V VS increasing
V VS decreasing
V
V – V UVON
UVOFF
V
IFH = 3 A
V
IFL = 3 A
mΩ ISH = 1 A; VS = 12 V
Tj = 25 °C
mΩ ISH = 1 A; VS = 12 V
Tj = 110 °C1)
mΩ ISL = 1 A; VIL = 5 V
Tj = 25 °C
mΩ ISL = 1 A; VIL = 5 V
Tj = 110 °C1)
Datasheet
12
Rev. 1.0, 2008-07-07