BTM7710GP Datasheet, PDF (13/18 Pages) Infineon Technologies AG – TrilithIC

BTM7710GP
I_SH1 = I_SH2 = I_SL1 = I_SL2 = 0 A; – 40 °C < T_j < 110 °C; 8 V < V_S < 18 V
unless otherwise specified
Pos. Parameter
Symbol Limit Values
min. typ.
Short Circuit of high-side switch to GND
5.4.18 Initial peak SC current
I_{SCP H}
t_del = 100 µs; V_S = 12 V; V_DSH = 12V
15
18
–
15
10
12
Short Circuit of high-side switch to V_S
5.4.19 Output pull-down-resistor
R_O
Thermal Shutdown¹⁾
8
15
5.4.20 Thermal shutdown junction
temperature
T_{j SD}
155 180
5.4.21 Thermal switch-on junction
temperature
T_{j SO}
150 170
5.4.22 Temperature hysteresis
ΔΤ
–
10
Status Flag Output ST of high-side switch
5.4.23 Low output voltage
5.4.24 Leakage current
5.4.25 Zener-limit-voltage
Switching times of high-side switch¹⁾
V_{ST L}
I_{ST LK}
V_{ST Z}
–
0.2
–
–
5.4
–
5.4.26 Turn-ON-time to 90% V_SH
5.4.27 Turn-OFF-time to 10% V_SH
5.4.28 Slew rate on 10 to 30% V_SH
5.4.29 Slew rate off 70 to 40% V_SH
Switching times of low-side switch¹⁾
t_ON
–
75
t_OFF
–
60
dV/d_tON
–
–
-dV/d_tOFF –
–
5.4.30 Turn-ON Delay Time
5.4.31 Rise Time
5.4.32 Switch-OFF Delay Time
5.4.33 Fall Time
Gate charge of low-side switch¹⁾
t_d(on)
t_r
t_d(off)
t_f
–
5
–
25
–
15
–
25
5.4.34
5.4.35
5.4.36
Input to source charge
Input to drain charge
Input charge total
Q_IS
–
4
Q_ID
–
8
Q_I
–
17
5.4.37 Input plateau voltage
V_(plateau)
–
2.5
1)Not subject to production test; specified by design
max.
20
–
15
35
190
180
–
0.6
10
–
160
160
1.8
2.1
–
–
–
–
–
–
40
-
Unit Test Condition
A T_j = – 40 °C
A T_j = + 25 °C
A
T_j = + 110 °C¹⁾
kΩ V_DSL = 3 V
°C –
°C –
°C ΔΤ = T_jSD – T_jSO
V I_ST = 1.6 mA
μA V_ST = 5 V
V I_ST = 1.6 mA
μs R_Load = 12 Ω
μs ^VS ^{= 12 V}
V/μs
V/μs
ns resistive load
ns ^ISL^{= 3A; V}DSL^=12V
ns ^{VIL = 5V; RG = 16Ω}
ns
nC I_SL = 3 A; V_DSL=12 V
nC I_SL = 3 A; V_DSL=12 V
nC I_SL = 3 A; V_DSL=12 V
V_IL = 0 to 5 V
V
I_SL = 3 A; V_DSL=12 V
Datasheet
13
Rev. 1.0, 2008-07-07