BFP750_15 Datasheet, PDF (8/29 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

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Features
• Highly linear low noise amplifier for all RF frontends
up to 5.5 GHz
• Output compression point OP_1dB = 16 dBm
at 60 mA, 3 V, 1.9 GHz, 50 Ω system
• Output 3rd order intermodulation point OIP₃ = 30 dBm
at 60 mA, 3 V, 1.9 GHz, 50 Ω system
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• Maximum gain G_ms = 19 dB at 60 mA, 3 V, 3.5 GHz
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• Minimum noise figure NF_min = 0.9 dB at 30 mA, 3 V, 1.9 GHz
• Based on Infineon´s reliable, high volume SiGe:C wafer technology
• Easy to use Pb-free (RoHS compliant) and halogen-free standard
package with visible leads
• Qualification report according to AEC-Q101 available
BFP750
Features
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Application Examples
Driver amplifier
• 1.9 GHz and 5.8 GHz cordless phones
Transmitter driver amplifier
• 2.4 GHz WLAN / Bluetooth / WiMAX
• 3.5 GHz WiMax
• 5.5 GHz WLAN / WiMAX
Output stage LNA for active antennas
• GPS, SDARS
• 2.4 / 5.5 GHz WLAN
• 2.4 / 3.5 / 5.5 GHz WiMAX, etc
Suitable for 8 - 12 GHz oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP750
Package
SOT343
1=B
Pin configuration
2=E
3=C
4=E
Marking
R8s
Data Sheet
8
Revision 1.1, 2015-01-14