BFP750_15 Datasheet, PDF (12/29 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

BFP750
5.3
Frequency Dependent AC Characteristics
Electrical Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, T_A = 25 °C
Top View
E
C
VC
Bias -T
OUT
VB
B
E
Bias-T
(Pin 1)
IN
Figure 5-1 BFP750 Testing Circuit
Table 5-3 AC Characteristics, V_CE = 3 V, f = 150 MHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
G_ms
–
G_ms
–
High linearity operation point
Class A operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
34.5 –
35.5 –
33
–
33.5 –
0.85 –
32.5 –
15
–
27.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 30 mA
I_C = 60 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 60 mA
Z_S = Z_opt
I_C = 30 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 60 mA
I_C = 60 mA
Data Sheet
12
Revision 1.1, 2015-01-14