BFP750_15 Datasheet, PDF (16/29 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

BFP750
Electrical Characteristics
Table 5-10 AC Characteristics, V_CE = 3 V, f = 5.5 GHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
G_ma
–
G_ma
–
High linearity operation point
Class A operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP3 –
Values
Typ. Max.
14
–
14
–
8
–
8
–
1.4
–
11
–
15
–
27
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 30 mA
I_C = 60 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 60 mA
Z_S = Z_opt
I_C = 30 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 60 mA
I_C = 60 mA
Note:
1. In order to get the NF_min values stated in this chapter the test fixture losses have been subtracted from all
measured result
2. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
16
Revision 1.1, 2015-01-14