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BFP750_15 Datasheet, PDF (10/29 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor
4
Thermal Characteristics
BFP750
Thermal Characteristics
Table 4-1 Thermal Resistance
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
Junction - soldering point1) RthJS
–
–
180
K/W –
1) For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation).
400
350
300
250
200
150
100
50
0
0
50
100
150
Ts [°C]
Figure 4-1 Total Power Dissipation Ptot = f (Ts)
Data Sheet
10
Revision 1.1, 2015-01-14