BFP750_15 Datasheet, PDF (15/29 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

BFP750
Electrical Characteristics
Table 5-8 AC Characteristics, V_CE = 3 V, f = 2.4 GHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
G_ms
–
G_ms
–
High linearity operation point
Class A operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
21
–
22
–
16.5 –
16.5 –
0.9
–
16
–
16
–
29.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 30 mA
I_C = 60 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 60 mA
Z_S = Z_opt
I_C = 30 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 60 mA
I_C = 60 mA
Table 5-9 AC Characteristics, V_CE = 3 V, f = 3.5 GHz
Parameter
Symbol
Min.
Maximum power gain
High linearity operation point
Class A operation point
Transducer gain
G_ms
–
G_ms
–
High linearity operation point
Class A operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
19
–
19
–
13
–
13
–
1.15 –
13.5 –
16
–
28.5 –
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 30 mA
I_C = 60 mA
Z_S = Z_L = 50 Ω
I_C = 30 mA
I_C = 60 mA
Z_S = Z_opt
I_C = 30 mA
I_C = 30 mA
Z_S = Z_L = 50 Ω
I_C = 60 mA
I_C = 60 mA
Data Sheet
15
Revision 1.1, 2015-01-14